? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dsx t j = 25 c to 150 c 1000 v v dgx t j = 25 c to 150 c, r gs = 1m 1000 v v gsx continuous 30 v v gsm transient 40 v i d25 t c = 25 c10a i dm t c = 25 c, pulse width limited by t jm 20 a p d t c = 25 c 400 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-268 4.0 g to-247 6.0 g ds99529b(12/12) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dsx v gs = -10v, i d = 250 a 1000 v v gs(off) v ds = 25v, i d = 250 a -1.5 - 3.5 v i gsx v gs = 30v, v ds = 0v 100 na i dsx(off) v ds = v dsx , v gs = -10v 25 a t j = 125 c 500 a r ds(on) v gs = 10v, i d = 10a, note 1 1.4 i d(on) v gs = 0v, v ds = 25v, note 1 10 a high voltage mosfets n-channel, depletion mode ixth10n100d IXTT10N100D v dsx = 1000v i d25 = 10a r ds(on) 1.4 features ? normally on mode ? international standard packages ? molding epoxies meet ul 94 v-0 flammability classification advantages ? easy to mount ? space savings ? high power density applications ? level shifting ? triggers ? solid state relays ? current regulators ? active load g = gate d = drain s = source tab = drain to-247 (ixth) g s d (tab) d to-268 (ixtt) s g d (tab)
IXTT10N100D ixth10n100d ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 0.5 ? i d25 , note 1 3.0 5.4 s c iss 2500 pf c oss v gs = -10v, v ds = 25v, f = 1mhz 300 pf c rss 100 pf t d(on) 35 ns t r 85 ns t d(off) 110 ns t f 75 ns q g(on) 130 nc q gs v gs = 10v, v ds = 0.5 ? v dsx , i d = 0.5 ? i d25 27 nc q gd 58 nc r thjc 0.31 c/w r thcs to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v sd i f = i d25 , v gs = -10v, note 1 1.1 1.5 v t rr 850 ns ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = -10v, v ds = 0.5 ? v dsx , i d = 0.5 ? i d25 r g = 4.7 (external) i f = 10a, -di/dt = 100a/ s v r = 100v, v gs = -10v to-247 outline terminals: 1 - gate 2 - drain 3 - source to-268 outline terminals: 1 - gate 2,4 - drain 3 - source e ? p 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2012 ixys corporation, all rights reserved IXTT10N100D ixth10n100d fig. 1. output characteristics @ t j = 25oc 0 1 2 3 4 5 6 7 8 9 10 02468101214 v ds - volts i d - amperes v gs = 5v 4v 3v 1v 0v -1v 2v fig. 2. extended output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 5v 4v 0 v - 1 v 1v 2v 3v fig. 3. output characteristics @ t j = 125oc 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 v ds - volts i d - amperes 2v 0v -1v 1v v gs = 5v 4v 3v fig. 4. r ds(on) normalized to i d = 5a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 10a i d = 5a fig. 5. r ds(on) normalized to i d = 5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 2 4 6 8 101214161820 i d - amperes r ds(on) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXTT10N100D ixth10n100d ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 1 2 3 4 5 6 7 8 9 10 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 1 2 3 4 5 6 7 8 9 012345678910 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc v gs = -10v fig. 11. gate charge -6 -4 -2 0 2 4 6 8 10 0 20 40 60 80 100 120 140 q g - nanocoulombs v gs - volts v ds = 500v i d = 5a i g = 10ma fig. 12. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 10. breakdown & threshold voltages vs. junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade bv dss / v gs(off) - normalized v gs(off) @ v ds = 25v bv dss @ v gs = -10v
? 2012 ixys corporation, all rights reserved ixys ref: t_10n100d(7n)12-10-12-c IXTT10N100D ixth10n100d fig. 15. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. forward-bias safe operating area @ t c = 25oc 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms 100ms dc fig. 14. forward-bias safe operating area @ t c = 75oc 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms 100ms dc
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